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Enhancing the Room Temperature Al Implantation Dose by Doub..:
, In:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
GAO, Jiaxu
;
LI, Chuangang
;
ZHANG, Xuan
... - p. 12-14 , 2020
Link:
https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308692
RT T1 <cTitle>2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Enhancing the Room Temperature Al Implantation Dose by Double Implantation and Activation Annealing</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9308692&Exemplar=1&LAN=DE A1 GAO, Jiaxu A1 LI, Chuangang A1 ZHANG, Xuan A1 JU, Tao A1 Zhang, Liguo A1 LI, Yang A1 ZHANG, Baoshun A1 FANG, Dan YR 2020 K1 Annealing K1 Silicon carbide K1 Doping K1 Temperature measurement K1 Lattices K1 Ion implantation K1 Satellites SP 12 OP 14 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308692 DO https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308692 SF ELIB - SuUB Bremen
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