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1 Ergebnisse
1
Comparison and Analysis of Short Circuit Performance of 120..:
, In:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
Lin, Chaobiao
;
Wu, Jiupeng
;
Xu, Hongyi
... - p. 81-84 , 2020
Link:
https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308698
RT T1 <cTitle>2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Comparison and Analysis of Short Circuit Performance of 1200V SiC MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9308698&Exemplar=1&LAN=DE A1 Lin, Chaobiao A1 Wu, Jiupeng A1 Xu, Hongyi A1 Ren, Na A1 Guo, Qing A1 Sheng, Kuang YR 2020 K1 MOSFET K1 Logic gates K1 Silicon carbide K1 Power dissipation K1 Resistance K1 Threshold voltage K1 Junctions SP 81 OP 84 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308698 DO https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308698 SF ELIB - SuUB Bremen
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