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Influence of Distributed Capacitance on Switching Character..:
, In:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
Yujie, DU
;
Cui, LI
;
Shuai, SUN
... - p. 49-53 , 2020
Link:
https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308722
RT T1 <cTitle>2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Influence of Distributed Capacitance on Switching Characteristics of 6500V SiC MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9308722&Exemplar=1&LAN=DE A1 Yujie, DU A1 Cui, LI A1 Shuai, SUN A1 Xinling, TANG A1 Fei, YANG A1 Junmin, WU YR 2020 K1 Capacitance K1 Silicon carbide K1 MOSFET K1 Transient analysis K1 Switches K1 Switching circuits K1 Inductance SP 49 OP 53 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308722 DO https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308722 SF ELIB - SuUB Bremen
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