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1 Ergebnisse
1
Low Ron,sp.diff and Ultra-high Voltage 4H-SiC n-channel IGB..:
, In:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
Xiaolei, Yang
;
Shiyan, Li
;
Hao, Liu
... - p. 42-44 , 2020
Link:
https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308751
RT T1 <cTitle>2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Low Ron,sp.diff and Ultra-high Voltage 4H-SiC n-channel IGBTs with carrier lifetime enhancement process</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9308751&Exemplar=1&LAN=DE A1 Xiaolei, Yang A1 Shiyan, Li A1 Hao, Liu A1 Ao, Liu A1 Zhifei, Zhao A1 Yun, Li A1 Xianglong, Yang A1 Runhua, Huang A1 Song, Bai YR 2020 K1 Insulated gate bipolar transistors K1 Oxidation K1 Charge carrier lifetime K1 Logic gates K1 Resistance K1 Fabrication K1 Current density K1 n-channel IGBTs K1 ultra-high voltage K1 low Ron,sp.diff K1 carrier lifetime enhancement SP 42 OP 44 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308751 DO https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308751 SF ELIB - SuUB Bremen
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