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1 Ergebnisse
1
Influence of the Groove Depth on the Electrical Characteris..:
, In:
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
Li, Chenglang
;
Qiu, Qiuling
;
Zhang, Jinwei
... - p. 34-39 , 2020
Link:
https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308870
RT T1 <cTitle>2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Influence of the Groove Depth on the Electrical Characteristics of the Vertical GaN Trench MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9308870&Exemplar=1&LAN=DE A1 Li, Chenglang A1 Qiu, Qiuling A1 Zhang, Jinwei A1 Liu, Zhenxing A1 Wu, Qianshu A1 Li, Liuan A1 He, Liang A1 Que, Taotao A1 Wang, Yapeng A1 Zhang, Qi A1 Rao, Yunliang A1 Wu, Zhisheng A1 He, Zhiyuan A1 Liu, Yang YR 2020 K1 Gallium nitride K1 Logic gates K1 MOSFET K1 Threshold voltage K1 Semiconductor process modeling K1 Resistance K1 Doping SP 34 OP 39 LK http://dx.doi.org/https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308870 DO https://doi.org/10.1109/SSLChinaIFWS51786.2020.9308870 SF ELIB - SuUB Bremen
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