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1 Ergebnisse
1
On the impact of Gate field-plate length and barrier layer ..:
, In:
2020 IEEE International Integrated Reliability Workshop (IIRW)
,
Lin, Chien-Yu
;
Putcha, Vamsi
;
Alian, Alireza
... - p. 1-7 , 2020
Link:
https://doi.org/10.1109/IIRW49815.2020.9312857
RT T1
2020 IEEE International Integrated Reliability Workshop (IIRW)
: T1
On the impact of Gate field-plate length and barrier layer thickness on TDDB lifetime of GaN-on-Si MISHEMT devices for RF/5G/mm-Wave applications
UL https://suche.suub.uni-bremen.de/peid=ieee-9312857&Exemplar=1&LAN=DE A1 Lin, Chien-Yu A1 Putcha, Vamsi A1 Alian, Alireza A1 Waldron, Niamh A1 Linten, Dimitri A1 Collaert, Nadine A1 Chang, Ting-Chang YR 2020 SN 2374-8036 K1 Logic gates K1 Wide band gap semiconductors K1 Aluminum gallium nitride K1 Dispersion K1 Substrates K1 Stress K1 Silicon K1 GaN K1 GaNRF reliability K1 MISHEMT K1 TDDB K1 Gate field-plate SP 1 OP 7 LK http://dx.doi.org/https://doi.org/10.1109/IIRW49815.2020.9312857 DO https://doi.org/10.1109/IIRW49815.2020.9312857 SF ELIB - SuUB Bremen
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