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Modeling the Hysteresis of Current-Voltage Characteristics ..:
, In:
2020 IEEE International Integrated Reliability Workshop (IIRW)
,
Vasilev, Alexander
;
Jech, Markus
;
Grill, Alexander
... - p. 1-4 , 2020
Link:
https://doi.org/10.1109/IIRW49815.2020.9312864
RT T1 <cTitle>2020 IEEE International Integrated Reliability Workshop (IIRW)</cTitle>: T1 <Title>Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9312864&Exemplar=1&LAN=DE A1 Vasilev, Alexander A1 Jech, Markus A1 Grill, Alexander A1 Rzepa, Gerhard A1 Schleich, Christian A1 Makarov, Alexander A1 Pobegen, Gregor A1 Grasser, Tibor A1 Waltl, Michael A1 Tyaginov, Stanislav YR 2020 SN 2374-8036 K1 Electron traps K1 Temperature measurement K1 Hysteresis K1 Silicon carbide K1 Logic gates K1 MOSFET K1 Voltage measurement K1 4H-SiC K1 physical modeling K1 MOSFETs K1 non-radiative multiphonon model K1 border traps SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IIRW49815.2020.9312864 DO https://doi.org/10.1109/IIRW49815.2020.9312864 SF ELIB - SuUB Bremen
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