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1 Ergebnisse
1
ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by..:
, In:
202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)
,
Zhou, Yu-jie
;
Chen, Shen Li
;
Wu, Pei-Lin
... - p. 59-60 , 2020
Link:
https://doi.org/10.1109/ICKII50300.2020.9318840
RT T1 <cTitle>202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)</cTitle>: T1 <Title>ESD-capability Enhancement of Ultra-high Voltage nLDMOSs by the DPW Discrete Layer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9318840&Exemplar=1&LAN=DE A1 Zhou, Yu-jie A1 Chen, Shen Li A1 Wu, Pei-Lin A1 Lin, Po-Lin A1 Fan, Sheng-Kai A1 Lan, Tien-Yu A1 Hong, Shi-Zhe YR 2020 K1 Modulation K1 Electrostatic discharges K1 Logic gates K1 Electric breakdown K1 MOSFET K1 High-k dielectric materials K1 Technological innovation K1 Deep p-type well (DPW) K1 Electrostatic discharge (ESD) K1 Lateral diffused MOS(LDMOS) K1 Secondary breakdown current (It2) K1 Ultra-high voltage (UHV) SP 59 OP 60 LK http://dx.doi.org/https://doi.org/10.1109/ICKII50300.2020.9318840 DO https://doi.org/10.1109/ICKII50300.2020.9318840 SF ELIB - SuUB Bremen
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