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1
ESD-ability of Circular nLDMOS Transistors of UHV by Super-..:
, In:
202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)
,
Lan, Tien-Yu
;
Chen, Shen-Li
;
Lin, Po-Lin
... - p. 57-58 , 2020
Link:
https://doi.org/10.1109/ICKII50300.2020.9318923
RT T1 <cTitle>202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)</cTitle>: T1 <Title>ESD-ability of Circular nLDMOS Transistors of UHV by Super-junction Length Modulation and Concentration Gradient</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9318923&Exemplar=1&LAN=DE A1 Lan, Tien-Yu A1 Chen, Shen-Li A1 Lin, Po-Lin A1 Fan, Sheng-Kai A1 Zhou, Yu-Jie A1 Hong, Shi-Zhe A1 Chen, Hung-Wei YR 2020 K1 Modulation K1 Electrostatic discharges K1 Layout K1 Electric breakdown K1 Logic gates K1 Power electronics K1 Breakdown voltage K1 Electrostatic discharge (ESD) K1 Human body model (HBM) K1 n-channel lateral-diffused MOSFET (nLDMOS) K1 Super-junction (SJ) SP 57 OP 58 LK http://dx.doi.org/https://doi.org/10.1109/ICKII50300.2020.9318923 DO https://doi.org/10.1109/ICKII50300.2020.9318923 SF ELIB - SuUB Bremen
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