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1 Ergebnisse
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Strengthened ESD Reliability of HV nLDMOSs with Embedded Ho..:
, In:
202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)
,
Hong, Shi-Zhe
;
Chen, Shen-Li
;
Fan, Sheng-Kai
... - p. 78-79 , 2020
Link:
https://doi.org/10.1109/ICKII50300.2020.9318957
RT T1 <cTitle>202020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)</cTitle>: T1 <Title>Strengthened ESD Reliability of HV nLDMOSs with Embedded Horizontal Schottky Devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9318957&Exemplar=1&LAN=DE A1 Hong, Shi-Zhe A1 Chen, Shen-Li A1 Fan, Sheng-Kai A1 Lin, Po-Lin A1 Lan, Tien-Yu A1 Zhou, Yu-Jie YR 2020 K1 Schottky diodes K1 Electrostatic discharges K1 Modulation K1 Logic gates K1 Layout K1 Electric breakdown K1 Three-dimensional displays K1 Electrostatic discharge (ESD) K1 Lateral Diffusion MOS (LDMOS) K1 Schottky Diode K1 Secondary breakdown current (It2) SP 78 OP 79 LK http://dx.doi.org/https://doi.org/10.1109/ICKII50300.2020.9318957 DO https://doi.org/10.1109/ICKII50300.2020.9318957 SF ELIB - SuUB Bremen
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