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1 Ergebnisse
1
High brightness and bonding yield of integrated Si-CMOS and..:
, In:
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
,
Lee, Kwang Hong
;
Zhang, Lin
;
Zhang, Li
... - p. 1-3 , 2019
Link:
https://doi.org/10.1109/S3S46989.2019.9320500
RT T1
2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
: T1
High brightness and bonding yield of integrated Si-CMOS and GaN LED wafers
UL https://suche.suub.uni-bremen.de/peid=ieee-9320500&Exemplar=1&LAN=DE A1 Lee, Kwang Hong A1 Zhang, Lin A1 Zhang, Li A1 Wang, Yue A1 Lee, Kenneth Eng Kian A1 Chua, Soo Jin A1 Fitzgerald, Eugene A. A1 Tan, Chuan Seng YR 2019 K1 Gallium nitride K1 Light emitting diodes K1 Substrates K1 Silicon K1 Surface treatment K1 Bonding K1 Diamond K1 Heterogeneous integration K1 Si-CMOS K1 GaN LED K1 wafer bonding SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/S3S46989.2019.9320500 DO https://doi.org/10.1109/S3S46989.2019.9320500 SF ELIB - SuUB Bremen
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