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1 Ergebnisse
1
Effect of Underlap with Fixed Gate Length: GaN-Based Double..:
, In:
2021 2nd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST)
,
Hasan, Md. Rokib
;
Islam, Md. Rabiul
;
Bhuiyan, Tanjim Masroor
... - p. 53-56 , 2021
Link:
https://doi.org/10.1109/ICREST51555.2021.9331038
RT T1 <cTitle>2021 2nd International Conference on Robotics, Electrical and Signal Processing Techniques (ICREST)</cTitle>: T1 <Title>Effect of Underlap with Fixed Gate Length: GaN-Based Double-Gate MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9331038&Exemplar=1&LAN=DE A1 Hasan, Md. Rokib A1 Islam, Md. Rabiul A1 Bhuiyan, Tanjim Masroor A1 Nibir, Muhib Ashraf A1 Hasan, Md. Emran A1 Hossain, Tanvir YR 2021 K1 MOSFET K1 Simulation K1 Switches K1 Logic gates K1 Very large scale integration K1 Threshold voltage K1 Software K1 GaN K1 underlap K1 DG-MOSFETs K1 DIBL K1 ION K1 SS K1 switching characteristics SP 53 OP 56 LK http://dx.doi.org/https://doi.org/10.1109/ICREST51555.2021.9331038 DO https://doi.org/10.1109/ICREST51555.2021.9331038 SF ELIB - SuUB Bremen
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