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A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Develo..:

, In: IEEE MTT-S International Microwave Symposium Digest, 2005.,

Kamo, Y. ; Kunii, T. ; Takeuchi, H.... - p. 495-498 , 2005

Link: https://doi.org/10.1109/MWSYM.2005.1516638

RT 
T1 <cTitle>IEEE MTT-S International Microwave Symposium Digest, 2005.</cTitle>: T1 <Title>A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9387756&Exemplar=1&LAN=DE
				
A1 Kamo, Y.
A1 Kunii, T.
A1 Takeuchi, H.
A1 Yamamoto, Y.
A1 Totsuka, M.
A1 Shiga, T.
A1 Minami, H.
A1 Kitano, T.
A1 Miyakuni, S.
A1 Oku, T.
A1 Inoue, A.
A1 Nanjo, T.
A1 Chiba, H.
A1 Suita, M.
A1 Oishi, T.
A1 Abe, Y.
A1 Tsuyama, Y.
A1 Shirahana, R.
A1 Ohtsuka, H.
A1 Iyomasa, K.
A1 Yamanaka, K.
A1 Hieda, M.
A1 Nakayama, M.
A1 Ishikawa, T.
A1 Takagi, T.
A1 Marumoto, K.
A1 Matsuda, Y.
YR 2005
SN 0149-645X
K1 Silicon compounds
K1 HEMTs
K1 Logic gates
K1 Wide band gap semiconductors
K1 MODFETs
K1 Transient analysis
K1 Passivation
K1 C-band
K1 Cat-CVD
K1 collapse
K1 GaN
K1 HEMT
K1 high breakdown voltage
K1 high power
K1 NH3
SP 495
OP 498
LK http://dx.doi.org/https://doi.org/10.1109/MWSYM.2005.1516638
DO https://doi.org/10.1109/MWSYM.2005.1516638
SF ELIB - SuUB Bremen

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