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1 Ergebnisse
1
On the impact of buffer and GaN-channel thickness on curren..:
, In:
2021 IEEE International Reliability Physics Symposium (IRPS)
,
Putcha, V.
;
Cheng, L.
;
Alian, A.
... - p. 1-8 , 2021
Link:
https://doi.org/10.1109/IRPS46558.2021.9405139
RT T1 <cTitle>2021 IEEE International Reliability Physics Symposium (IRPS)</cTitle>: T1 <Title>On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9405139&Exemplar=1&LAN=DE A1 Putcha, V. A1 Cheng, L. A1 Alian, A. A1 Zhao, M. A1 Lu, H. A1 Parvais, B. A1 Waldron, N. A1 Linten, D. A1 Collaert, N. YR 2021 SN 1938-1891 K1 Performance evaluation K1 Spectroscopy K1 HEMTs K1 Reliability engineering K1 Transient analysis K1 MODFETs K1 Gallium nitride K1 GaN K1 RF/6G applications K1 dynamic-RON K1 buffer dispersion K1 current transient spectroscopy K1 activation energy SP 1 OP 8 LK http://dx.doi.org/https://doi.org/10.1109/IRPS46558.2021.9405139 DO https://doi.org/10.1109/IRPS46558.2021.9405139 SF ELIB - SuUB Bremen
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