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1 Ergebnisse
1
The properties, effect and extraction of localized defect p..:
, In:
2021 IEEE International Reliability Physics Symposium (IRPS)
,
Vandemaele, Michiel
;
Kaczer, Ben
;
Tyaginov, Stanislav
... - p. 1-7 , 2021
Link:
https://doi.org/10.1109/IRPS46558.2021.9405164
RT T1
2021 IEEE International Reliability Physics Symposium (IRPS)
: T1
The properties, effect and extraction of localized defect profiles from degraded FET characteristics
UL https://suche.suub.uni-bremen.de/peid=ieee-9405164&Exemplar=1&LAN=DE A1 Vandemaele, Michiel A1 Kaczer, Ben A1 Tyaginov, Stanislav A1 Franco, Jacopo A1 Degraeve, Robin A1 Chasin, Adrian A1 Wu, Zhicheng A1 Bury, Erik A1 Xiang, Yang A1 Mertens, Hans A1 Groeseneken, Guido YR 2021 SN 1938-1891 K1 Degradation K1 Location awareness K1 Voltage measurement K1 Density measurement K1 Field effect transistors K1 Hot carriers K1 Threshold voltage K1 Hot-carrier degradation K1 interface defects K1 simulations K1 TCAD SP 1 OP 7 LK http://dx.doi.org/https://doi.org/10.1109/IRPS46558.2021.9405164 DO https://doi.org/10.1109/IRPS46558.2021.9405164 SF ELIB - SuUB Bremen
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