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1 Ergebnisse
1
FDSOI NCFET with Stepped Thickness Ferroelectric Layer:
, In:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Gu, Mingyuan
;
Yao, Jiafei
;
Guo, Yufeng
... - p. 1-3 , 2021
Link:
https://doi.org/10.1109/EDTM50988.2021.9420907
RT T1 <cTitle>2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>FDSOI NCFET with Stepped Thickness Ferroelectric Layer</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9420907&Exemplar=1&LAN=DE A1 Gu, Mingyuan A1 Yao, Jiafei A1 Guo, Yufeng A1 Zhang, Maolin A1 Liang, Qicong A1 Wu, Jiayi A1 Liu, Jincheng A1 Xu, Dongxiang YR 2021 K1 Electric potential K1 Simulation K1 Capacitance-voltage characteristics K1 Field effect transistors K1 Silicon-on-insulator K1 Logic gates K1 Tools K1 Negative capacitance K1 Sub-threshold swing K1 Stepped thickness ferroelectric layer K1 FDSOI SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM50988.2021.9420907 DO https://doi.org/10.1109/EDTM50988.2021.9420907 SF ELIB - SuUB Bremen
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