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1 Ergebnisse
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Accurate TCAD simulation of trench-gate IGBTs and its appli..:
, In:
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
,
Watanabe, M.
;
Shigyo, N.
;
Hoshii, T.
... - p. 1-3 , 2021
Link:
https://doi.org/10.1109/EDTM50988.2021.9420922
RT T1 <cTitle>2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)</cTitle>: T1 <Title>Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9420922&Exemplar=1&LAN=DE A1 Watanabe, M. A1 Shigyo, N. A1 Hoshii, T. A1 Furukawa, K. A1 Kakushima, K. A1 Satoh, K. A1 Matsudai, T. A1 Saraya, T. A1 Takakura, T. A1 Muneta, I. A1 Wakabayashi, H. A1 Nakajima, A. A1 Nishizawa, S. A1 Tsutsui, K. A1 Hiramoto, T. A1 Ohashi, H. A1 Iwai, H. YR 2021 K1 Insulated gate bipolar transistors K1 Resistance K1 Solid modeling K1 Electric potential K1 Current-voltage characteristics K1 Predictive models K1 Silicon K1 IGBT K1 trench-gate K1 scaling K1 TCAD simulation K1 lifetime SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/EDTM50988.2021.9420922 DO https://doi.org/10.1109/EDTM50988.2021.9420922 SF ELIB - SuUB Bremen
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