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1 Ergebnisse
1
A TCAD Compatible SONOS Trapping Layer Model for Accurate P..:
, In:
2021 IEEE International Memory Workshop (IMW)
,
Schanovsky, F.
;
Verreck, D.
;
Arreghini, A.
... - p. 1-4 , 2021
Link:
https://doi.org/10.1109/IMW51353.2021.9439598
RT T1
2021 IEEE International Memory Workshop (IMW)
: T1
A TCAD Compatible SONOS Trapping Layer Model for Accurate Programming Dynamics
UL https://suche.suub.uni-bremen.de/peid=ieee-9439598&Exemplar=1&LAN=DE A1 Schanovsky, F. A1 Verreck, D. A1 Arreghini, A. A1 Rzepa, G. A1 Stanojevic, Z. A1 Kernstock, C. A1 Baumgartner, O. A1 Rosmeulen, M. A1 Karner, M. YR 2021 SN 2573-7503 K1 Programming K1 Logic gates K1 Mathematical model K1 Temperature measurement K1 Semiconductor device modeling K1 SONOS devices K1 Loss measurement K1 SONOS K1 VNAND K1 Flash Memory K1 Trapping Layer K1 ISPP K1 Retention K1 Modeling K1 TCAD SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IMW51353.2021.9439598 DO https://doi.org/10.1109/IMW51353.2021.9439598 SF ELIB - SuUB Bremen
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