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Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with Hi..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Romano, G.
;
Wirths, S.
;
Mihaila, A.
... - p. 263-266 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452193
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High–k Gate Dielectric</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452193&Exemplar=1&LAN=DE A1 Romano, G. A1 Wirths, S. A1 Mihaila, A. A1 Arango, Y. A1 Ruiz, A. A1 Knoll, L. YR 2021 SN 1946-0201 K1 MOSFET K1 Silicon carbide K1 Switches K1 Logic gates K1 Threshold voltage K1 Silicon K1 Robustness K1 Silicon Carbide K1 SiC K1 Power MOSFET K1 wide bandgap K1 high–k K1 short circuit test K1 ruggedness K1 switching K1 VGS=±15V SP 263 OP 266 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452193 DO https://doi.org/10.23919/ISPSD50666.2021.9452193 SF ELIB - SuUB Bremen
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