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1 Ergebnisse
1
Avalanche Reliability of Planar-gate SiC MOSFET with Varied..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Zhu, Zhengyun
;
Ren, Na
;
Xu, Hongyi
.. - p. 231-234 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452206
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Avalanche Reliability of Planar-gate SiC MOSFET with Varied JFET Region Width and Its Balance with Characteristic Performance</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452206&Exemplar=1&LAN=DE A1 Zhu, Zhengyun A1 Ren, Na A1 Xu, Hongyi A1 Liu, Li A1 Sheng, Kuang YR 2021 SN 1946-0201 K1 Performance evaluation K1 Heating systems K1 MOSFET K1 Silicon carbide K1 Failure analysis K1 Switches K1 Reliability engineering K1 SiC MOSFET K1 avalanche reliability K1 UIS K1 FOM SP 231 OP 234 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452206 DO https://doi.org/10.23919/ISPSD50666.2021.9452206 SF ELIB - SuUB Bremen
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