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1 Ergebnisse
1
Novel Monolithic Integrated Device with Gate Resistor for E..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Schulz, Wolfgang-Michael
;
Spang, Matthias
;
Wintrich, Arendt
.. - p. 119-122 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452211
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Novel Monolithic Integrated Device with Gate Resistor for External IGBT Clamping Leading to Enhanced Short Circuit Behavior</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452211&Exemplar=1&LAN=DE A1 Schulz, Wolfgang-Michael A1 Spang, Matthias A1 Wintrich, Arendt A1 Konig, Bernhard A1 Berberich, Sven E. YR 2021 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Resistors K1 Breakdown voltage K1 TV K1 Voltage measurement K1 Wires K1 Logic gates K1 simulation K1 reliability K1 epitaxy K1 TVS diode K1 short-circuit behavior SP 119 OP 122 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452211 DO https://doi.org/10.23919/ISPSD50666.2021.9452211 SF ELIB - SuUB Bremen
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