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1 Ergebnisse
1
Mitigation of Space-Charge-Modulation in 800-V JFET for HV ..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yuan, Zhangyi'an
;
Li, Xinjian
;
Qiao, Ming
... - p. 95-98 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452251
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-up Circuit Toward High ON-BV Performance</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452251&Exemplar=1&LAN=DE A1 Yuan, Zhangyi'an A1 Li, Xinjian A1 Qiao, Ming A1 Wang, Zhao A1 Cai, Ying A1 Jin, Feng A1 Yang, Jiye A1 Zhang, Shuhao A1 Hou, Dican A1 Zhou, Xin A1 Li, Zhaoji A1 Zhang, Bo YR 2021 SN 1946-0201 K1 Resistance K1 Performance evaluation K1 Modulation K1 High-voltage techniques K1 Logic gates K1 JFETs K1 Power semiconductor devices K1 On-state breakdown voltage (ON-BV) K1 off-state breakdown voltage (OFF-BV) K1 space charge modulation (SCM) K1 junction field-effect transistor (JFET) SP 95 OP 98 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452251 DO https://doi.org/10.23919/ISPSD50666.2021.9452251 SF ELIB - SuUB Bremen
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