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1 Ergebnisse
1
In depth TCAD analysis of threshold voltage on GaN-on-Si MO..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Jaud, M. -A.
;
Vandendaele, W.
;
Rrustemi, B.
... - p. 319-322 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452257
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452257&Exemplar=1&LAN=DE A1 Jaud, M. -A. A1 Vandendaele, W. A1 Rrustemi, B. A1 Viey, A. G. A1 Martin, S. A1 Le Royer, C. A1 Vauche, L. A1 Martinie, S. A1 Morvan, E. A1 Gwoziecki, R. A1 Modica, R. A1 Iucolano, F. A1 Plissonnier, M. A1 Poiroux, T. YR 2021 SN 1946-0201 K1 Integrated circuits K1 Semiconductor device measurement K1 Logic gates K1 HEMTs K1 Threshold voltage K1 Power semiconductor devices K1 MODFETs K1 GaN-on-Si HEMT K1 TCAD simulation SP 319 OP 322 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452257 DO https://doi.org/10.23919/ISPSD50666.2021.9452257 SF ELIB - SuUB Bremen
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