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1 Ergebnisse
1
Study of Unique ESD Tolerance Dependence on Backgate Ratio ..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Komatsu, Kanako
;
Ozaki, Koichi
;
Takeuchi, Fumio
... - p. 315-318 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452267
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Study of Unique ESD Tolerance Dependence on Backgate Ratio for RESURF LDMOS with Rated Voltage Variation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452267&Exemplar=1&LAN=DE A1 Komatsu, Kanako A1 Ozaki, Koichi A1 Takeuchi, Fumio A1 Shinohara, Daisuke A1 Kinoshita, Tomoko A1 Ishii, Yoshiaki A1 Sakamoto, Toshihiro A1 Matsuoka, Fumitomo YR 2021 SN 1946-0201 K1 Resistance K1 Integrated circuits K1 Electric potential K1 Semiconductor device measurement K1 Voltage measurement K1 Electrostatic discharges K1 Power semiconductor devices K1 fully isolated RESURF LDMOS K1 backgate ratio K1 ESD tolerance K1 parasitic bipolar action K1 breakdown voltage K1 on- resistance SP 315 OP 318 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452267 DO https://doi.org/10.23919/ISPSD50666.2021.9452267 SF ELIB - SuUB Bremen
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