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1 Ergebnisse
1
The FinFET effect in Silicon Carbide MOSFETs:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Udrea, F.
;
Naydenov, K.
;
Kang, H.
... - p. 75-78 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452282
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>The FinFET effect in Silicon Carbide MOSFETs</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452282&Exemplar=1&LAN=DE A1 Udrea, F. A1 Naydenov, K. A1 Kang, H. A1 Kato, T. A1 Kagoshima, E. A1 Nishiwaki, T. A1 Fujiwara, H. A1 Kimoto, T. YR 2021 SN 1946-0201 K1 Semiconductor device modeling K1 Resistance K1 Solid modeling K1 Temperature distribution K1 Three-dimensional displays K1 Silicon carbide K1 FinFETs K1 SiC MOSFET K1 channel resistance K1 mobility K1 FinFET K1 TCAD device modelling SP 75 OP 78 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452282 DO https://doi.org/10.23919/ISPSD50666.2021.9452282 SF ELIB - SuUB Bremen
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