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1 Ergebnisse
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Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetit..:
, In:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Wirths, Stephan
;
Mihaila, Andrei
;
Romano, Gianpaolo
... - p. 107-110 , 2021
Link:
https://doi.org/10.23919/ISPSD50666.2021.9452286
RT T1 <cTitle>2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9452286&Exemplar=1&LAN=DE A1 Wirths, Stephan A1 Mihaila, Andrei A1 Romano, Gianpaolo A1 Schneider, Nick A1 Ceccarelli, Edoardo A1 Alfieri, Giovanni A1 Arango, Yulieth A1 Knoll, Lars YR 2021 SN 1946-0201 K1 MOSFET K1 Semiconductor device measurement K1 Silicon carbide K1 Switches K1 Threshold voltage K1 Silicon K1 Power semiconductor devices K1 1.2kV SiC power MOSFETs K1 high-k K1 SiC K1 TDDB K1 reliability K1 wide band gap K1 automotive SP 107 OP 110 LK http://dx.doi.org/https://doi.org/10.23919/ISPSD50666.2021.9452286 DO https://doi.org/10.23919/ISPSD50666.2021.9452286 SF ELIB - SuUB Bremen
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