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1 Ergebnisse
1
Defect Principle and Improvement of 28nm Germanium Silicon ..:
, In:
2021 China Semiconductor Technology International Conference (CSTIC)
,
Yan, Qu
;
Kun, Cai
;
Chen, Hunglin
.. - p. 1-2 , 2021
Link:
https://doi.org/10.1109/CSTIC52283.2021.9461563
RT T1 <cTitle>2021 China Semiconductor Technology International Conference (CSTIC)</cTitle>: T1 <Title>Defect Principle and Improvement of 28nm Germanium Silicon Epitaxial Growth Process</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9461563&Exemplar=1&LAN=DE A1 Yan, Qu A1 Kun, Cai A1 Chen, Hunglin A1 Yin, Long A1 Kai, Wang YR 2021 K1 Performance evaluation K1 Semiconductor device reliability K1 Germanium K1 Silicon K1 Epitaxial growth K1 Silicon germanium K1 MOS devices K1 SiGe process K1 tiny particle defect K1 silicon germanium growth deficiency defect K1 Poly tip particle defect K1 Poly sidewall particle defect SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/CSTIC52283.2021.9461563 DO https://doi.org/10.1109/CSTIC52283.2021.9461563 SF ELIB - SuUB Bremen
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