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A study on lower saturation voltage of dual-gate thin-film ..:
, In:
2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)
,
Agarwal, Tarun Kumar
;
Siskos, Aris
;
De Roose, Florian
... - p. 1-4 , 2021
Link:
https://doi.org/10.1109/FLEPS51544.2021.9469847
RT T1 <cTitle>2021 IEEE International Conference on Flexible and Printable Sensors and Systems (FLEPS)</cTitle>: T1 <Title>A study on lower saturation voltage of dual-gate thin-film a-IGZO MOS transistors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9469847&Exemplar=1&LAN=DE A1 Agarwal, Tarun Kumar A1 Siskos, Aris A1 De Roose, Florian A1 Dehaene, Wim A1 Myny, Kris A1 Papadopoulos, Nikolas YR 2021 K1 MOSFET K1 Conferences K1 Logic gates K1 Sensor phenomena and characterization K1 Sensor systems K1 Thin film transistors K1 Mathematical model K1 amorphous indium–gallium–zinc oxide (a-IGZO) K1 thin-film transistor (TFT) K1 frontgate (FG) K1 backgate (BG) K1 metal-oxide-semiconductor (MOS) SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/FLEPS51544.2021.9469847 DO https://doi.org/10.1109/FLEPS51544.2021.9469847 SF ELIB - SuUB Bremen
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