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1
Comprehensive Characterization of MOSFET Intrinsic Capacita..:
, In:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Jimenez, Sergio
;
Lemmon, Andrew
;
Nelson, Blake
. - p. 1524-1530 , 2021
Link:
https://doi.org/10.1109/APEC42165.2021.9487289
RT T1 <cTitle>2021 IEEE Applied Power Electronics Conference and Exposition (APEC)</cTitle>: T1 <Title>Comprehensive Characterization of MOSFET Intrinsic Capacitances</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9487289&Exemplar=1&LAN=DE A1 Jimenez, Sergio A1 Lemmon, Andrew A1 Nelson, Blake A1 Deboi, Brian YR 2021 SN 2470-6647 K1 Semiconductor device modeling K1 MOSFET K1 Silicon carbide K1 Predictive models K1 Logic gates K1 Capacitance K1 Silicon K1 interelectrode capacitance K1 LTspice K1 semiconductor device modeling K1 device characterization K1 SiC MOSFET K1 DMOS K1 SPICE K1 transistor modeling K1 Miller capacitance SP 1524 OP 1530 LK http://dx.doi.org/https://doi.org/10.1109/APEC42165.2021.9487289 DO https://doi.org/10.1109/APEC42165.2021.9487289 SF ELIB - SuUB Bremen
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