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1 Ergebnisse
1
An Accurate Compact Model for GaN Power Switches with the P..:
, In:
2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
,
Khandelwal, Sourabh
;
Labrecque, M.
;
Huang, Y.
... - p. 2389-2392 , 2021
Link:
https://doi.org/10.1109/APEC42165.2021.9487372
RT T1
2021 IEEE Applied Power Electronics Conference and Exposition (APEC)
: T1
An Accurate Compact Model for GaN Power Switches with the Physics-based ASM-HEMT Model
UL https://suche.suub.uni-bremen.de/peid=ieee-9487372&Exemplar=1&LAN=DE A1 Khandelwal, Sourabh A1 Labrecque, M. A1 Huang, Y. A1 Qi, F. A1 Wang, Z. A1 Smith, P. A1 Wu, Y. A1 Lal, R. YR 2021 SN 2470-6647 K1 Semiconductor device modeling K1 MOSFET K1 Capacitance-voltage characteristics K1 Simulation K1 Switches K1 HEMTs K1 Capacitance K1 GaN power switch K1 SPICE models K1 GaN SPICE model K1 GaN Cascode SP 2389 OP 2392 LK http://dx.doi.org/https://doi.org/10.1109/APEC42165.2021.9487372 DO https://doi.org/10.1109/APEC42165.2021.9487372 SF ELIB - SuUB Bremen
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