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Analog Analysis of Novel Ferroelectric-Dual Material Oxide ..:
, In:
2021 6th International Conference on Communication and Electronics Systems (ICCES)
,
Isha
;
Chaujar, Rishu
- p. 53-57 , 2021
Link:
https://doi.org/10.1109/ICCES51350.2021.9489168
RT T1 <cTitle>2021 6th International Conference on Communication and Electronics Systems (ICCES)</cTitle>: T1 <Title>Analog Analysis of Novel Ferroelectric-Dual Material Oxide Stack-Double Gate FET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9489168&Exemplar=1&LAN=DE A1 Isha A1 Chaujar, Rishu YR 2021 K1 Silicon compounds K1 MOSFET K1 Metals K1 Logic gates K1 Very large scale integration K1 Software K1 Electric fields K1 Ferroelectric-Dual Material-Double Gate MOSFET (Fe-DM-DG MOSFET) K1 Ferroelectric-Dual Material Oxide Stack-Double Gate FET (Fe-DMOS-DG FET) K1 high k-dielectric K1 short channel effects SP 53 OP 57 LK http://dx.doi.org/https://doi.org/10.1109/ICCES51350.2021.9489168 DO https://doi.org/10.1109/ICCES51350.2021.9489168 SF ELIB - SuUB Bremen
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