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1 Ergebnisse
1
Channel Surface Integrity with 2.4nm High-k Gate Dielectric..:
, In:
2021 9th International Symposium on Next Generation Electronics (ISNE)
,
Wang, Mu-Chun
;
Chang, Cheng-Hsun-Tony
;
Hu, Hao-Lun
... - p. 1-4 , 2021
Link:
https://doi.org/10.1109/ISNE48910.2021.9493656
RT T1 <cTitle>2021 9th International Symposium on Next Generation Electronics (ISNE)</cTitle>: T1 <Title>Channel Surface Integrity with 2.4nm High-k Gate Dielectric under DPN Treatment at Different Annealing Temperatures</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9493656&Exemplar=1&LAN=DE A1 Wang, Mu-Chun A1 Chang, Cheng-Hsun-Tony A1 Hu, Hao-Lun A1 Zhong, Zi-Wen A1 Qiu, Guo-Xuan A1 Lan, Wen-How YR 2021 SN 2378-8607 K1 Temperature measurement K1 Annealing K1 Process control K1 Logic gates K1 Gate leakage K1 Dielectrics K1 Nitrogen K1 channel surface K1 integrity K1 DPN treatment K1 mobility K1 drive current K1 gate leakage SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ISNE48910.2021.9493656 DO https://doi.org/10.1109/ISNE48910.2021.9493656 SF ELIB - SuUB Bremen
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