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Fabrication of high-performance Ge-MOS structure using Al2O..:
, In:
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)
,
Toyoda, Kenichiro
;
Ito, Keisuke
;
Iwazaki, Yoshitaka
. - p. 112-115 , 2021
Link:
https://doi.org/10.23919/AM-FPD52126.2021.9499178
RT T1 <cTitle>2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)</cTitle>: T1 <Title>Fabrication of high-performance Ge-MOS structure using Al2O3/TiO2stacked gate insulating film</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9499178&Exemplar=1&LAN=DE A1 Toyoda, Kenichiro A1 Ito, Keisuke A1 Iwazaki, Yoshitaka A1 Ueno, Tomo YR 2021 K1 Performance evaluation K1 Annealing K1 Films K1 Switches K1 Germanium K1 High-k dielectric materials K1 Titanium dioxide SP 112 OP 115 LK http://dx.doi.org/https://doi.org/10.23919/AM-FPD52126.2021.9499178 DO https://doi.org/10.23919/AM-FPD52126.2021.9499178 SF ELIB - SuUB Bremen
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