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Comparing Switching and Conduction Losses of Uni- and Bidir..:
, In:
2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)
,
Goldmann, Daniel
;
Mayer, Sebastian
;
Schramm, Simon
. - p. P.1-P.9 , 2021
Link:
https://doi.org/10.23919/EPE21ECCEEurope50061.2021.957..
RT T1 <cTitle>2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe)</cTitle>: T1 <Title>Comparing Switching and Conduction Losses of Uni- and Bidirectional SiC Semiconductor Switches for AC Applications</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9570496&Exemplar=1&LAN=DE A1 Goldmann, Daniel A1 Mayer, Sebastian A1 Schramm, Simon A1 Herzog, Hans-Georg YR 2021 K1 Semiconductor device measurement K1 Silicon carbide K1 Pulse measurements K1 Current measurement K1 Switching frequency K1 Switching loss K1 Prototypes K1 Converter circuit K1 Double pulse tests K1 Power semiconductor device K1 Switching losses K1 Wide bandgap devices SP P.1 OP P.9 LK http://dx.doi.org/https://doi.org/10.23919/EPE21ECCEEurope50061.2021.9570496 DO https://doi.org/10.23919/EPE21ECCEEurope50061.2021.9570496 SF ELIB - SuUB Bremen
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