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Observation of Power MOSFET Composed of Silicon Carbide wit..:
, In:
2021 IEEE 30th International Symposium on Industrial Electronics (ISIE)
,
Doi, A.
;
Satoh, N.
;
Yamamoto, H.
- p. 1-6 , 2021
Link:
https://doi.org/10.1109/ISIE45552.2021.9576464
RT T1 <cTitle>2021 IEEE 30th International Symposium on Industrial Electronics (ISIE)</cTitle>: T1 <Title>Observation of Power MOSFET Composed of Silicon Carbide with a Planar Type in the Voltage Applying State Using a Scanning Probe Microscope</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9576464&Exemplar=1&LAN=DE A1 Doi, A. A1 Satoh, N. A1 Yamamoto, H. YR 2021 SN 2163-5145 K1 Semiconductor device measurement K1 Atomic force microscopy K1 MOSFET K1 Silicon carbide K1 Current measurement K1 Scanning probe microscopy K1 Force K1 Scanning probe microscope K1 Power device K1 Wide bandgap semiconductor K1 Scanning capacitance force microscopy SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/ISIE45552.2021.9576464 DO https://doi.org/10.1109/ISIE45552.2021.9576464 SF ELIB - SuUB Bremen
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