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1 Ergebnisse
1
CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amp..:
, In:
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
,
Xie, Hanlin
;
Liu, Zhihong
;
Hu, Wenrui
... - p. 397-399 , 2021
Link:
https://doi.org/10.1109/IMWS-AMP53428.2021.9643883
RT T1
2021 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)
: T1
CMOS-Compatible InAlN/GaN HEMTs on Silicon for RF Power Amplifiers in 5G Mobile SoCs
UL https://suche.suub.uni-bremen.de/peid=ieee-9643883&Exemplar=1&LAN=DE A1 Xie, Hanlin A1 Liu, Zhihong A1 Hu, Wenrui A1 Gao, Yu A1 Lee, Kenneth E. A1 Guo, Yong-Xin A1 Ng, Geok Ing YR 2021 K1 Radio frequency K1 Performance evaluation K1 Electric potential K1 5G mobile communication K1 Metallization K1 Power amplifiers K1 HEMTs K1 GaN-on-Si K1 HEMT K1 RF K1 5G K1 Mobile SoC SP 397 OP 399 LK http://dx.doi.org/https://doi.org/10.1109/IMWS-AMP53428.2021.9643883 DO https://doi.org/10.1109/IMWS-AMP53428.2021.9643883 SF ELIB - SuUB Bremen
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