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1 Ergebnisse
1
Design Methodology of SiC MOSFET Based Bidirectional CLLC R..:
, In:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Liu, Mingjie
;
Wang, Xuehua
;
Xu, Jiangtao
- p. 423-427 , 2021
Link:
https://doi.org/10.1109/WiPDAAsia51810.2021.9656028
RT T1
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
Design Methodology of SiC MOSFET Based Bidirectional CLLC Resonant Converter for Wide Battery Voltage Range
UL https://suche.suub.uni-bremen.de/peid=ieee-9656028&Exemplar=1&LAN=DE A1 Liu, Mingjie A1 Wang, Xuehua A1 Xu, Jiangtao YR 2021 K1 Semiconductor device modeling K1 MOSFET K1 Silicon carbide K1 Prototypes K1 Resonant converters K1 Microgrids K1 Zero voltage switching K1 CLLC resonant converter K1 wide voltage range K1 FHA model K1 design methodology SP 423 OP 427 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia51810.2021.9656028 DO https://doi.org/10.1109/WiPDAAsia51810.2021.9656028 SF ELIB - SuUB Bremen
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