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1 Ergebnisse
1
Optimized Parameter Selection Method of Driving Circuit for..:
, In:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Qin, Haihong
;
Xie, Sixuan
;
Bu, Feifei
... - p. 290-295 , 2021
Link:
https://doi.org/10.1109/WiPDAAsia51810.2021.9656029
RT T1
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
Optimized Parameter Selection Method of Driving Circuit for SiC MOSFET
UL https://suche.suub.uni-bremen.de/peid=ieee-9656029&Exemplar=1&LAN=DE A1 Qin, Haihong A1 Xie, Sixuan A1 Bu, Feifei A1 Wang, Shishan A1 Chen, Wenming A1 Fu, Dafeng YR 2021 K1 Resistance K1 MOSFET K1 Limiting K1 Silicon carbide K1 Voltage K1 Logic gates K1 Mathematical models K1 SiC MOSFET K1 gate driving circuit K1 parasitic parameters K1 driving parameter selection SP 290 OP 295 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia51810.2021.9656029 DO https://doi.org/10.1109/WiPDAAsia51810.2021.9656029 SF ELIB - SuUB Bremen
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