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1 Ergebnisse
1
Degradation mechanism of D-mode GaN HEMT based on high temp..:
, In:
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Lu, Meng
;
Chen, Yiqiang
;
Liao, Min
... - p. 167-170 , 2021
Link:
https://doi.org/10.1109/WiPDAAsia51810.2021.9656047
RT T1
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress
UL https://suche.suub.uni-bremen.de/peid=ieee-9656047&Exemplar=1&LAN=DE A1 Lu, Meng A1 Chen, Yiqiang A1 Liao, Min A1 Liu, Chang A1 Zheng, Shuaizhi A1 Gao, Kexin YR 2021 K1 Degradation K1 Electrodes K1 Temperature K1 Asia K1 HEMTs K1 Capacitance K1 Reliability K1 high temperature reverse bias stress (HTRB) K1 capacitance-voltage characteristics (C-V) K1 traps K1 D-mode GaN HEMTs SP 167 OP 170 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia51810.2021.9656047 DO https://doi.org/10.1109/WiPDAAsia51810.2021.9656047 SF ELIB - SuUB Bremen
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