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ICP vs CCP in High Aspect Ratio Etching of SiO2 using Ar/C4..:

, In: 2020 IEEE International Conference on Plasma Science (ICOPS),
Kruger, Florian ; Kushner, Mark J. ; Shim, Seungbo.. - p. 88-88 , 2020
Link: https://doi.org/10.1109/ICOPS37625.2020.9717435