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Nox and Buried PN junctions effect on RF performance of Hig..:

, In: 2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),

Moulin, Maxime ; Rack, Martin ; Fache, Thibaud... - p. 23-26 , 2022

Link: https://doi.org/10.1109/SiRF53094.2022.9720037

RT 
T1 <cTitle>2022 IEEE 22nd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)</cTitle>: T1 <Title>Nox and Buried PN junctions effect on RF performance of High-Resistivity Silicon substrates</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9720037&Exemplar=1&LAN=DE
				
A1 Moulin, Maxime
A1 Rack, Martin
A1 Fache, Thibaud
A1 Nabet, Massinissa
A1 Chalupa, Zdenek
A1 Plantier, Christophe
A1 Allibert, Frederic
A1 Gaillard, Fred
A1 Lugo, Jose
A1 Hutin, Louis
A1 Raskin, Jean-Pierre
YR 2022
SN 2474-9761
K1 Radio frequency
K1 Wireless communication
K1 Linearity
K1 Silicon-on-insulator
K1 Monolithic integrated circuits
K1 Silicon
K1 Junctions
K1 Small-signal
K1 large-signal
K1 harmonic distortion (HD)
K1 pn junctions
K1 non-linear characterization
K1 CMOS process
K1 linearity
K1 substrate resistivity
K1 RF
K1 mmW
K1 TCAD
SP 23
OP 26
LK http://dx.doi.org/https://doi.org/10.1109/SiRF53094.2022.9720037
DO https://doi.org/10.1109/SiRF53094.2022.9720037
SF ELIB - SuUB Bremen

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