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1 Ergebnisse
1
FeRAM using Anti-ferroelectric Capacitors for High-speed an..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Chang, S. -C.
;
Haratipour, N.
;
Shivaraman, S.
... - p. 33.2.1-33.2.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720510
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>FeRAM using Anti-ferroelectric Capacitors for High-speed and High-density Embedded Memory</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720510&Exemplar=1&LAN=DE A1 Chang, S. -C. A1 Haratipour, N. A1 Shivaraman, S. A1 Neumann, C. A1 Atanasov, S. A1 Peck, J. A1 Kabir, N. A1 Tung, I. -C. A1 Liu, H. A1 Krist, B. A1 Oni, A. A1 Sung, S. A1 Doyle, B. A1 Allen, G. A1 Engel, C. A1 Roy, A. A1 Hoff, T. A1 Li, H. A1 Hamzaoglu, F. A1 Bristol, R. A1 Radosavljevic, M. A1 Turkot, B. A1 Metz, M. A1 Young, I. A1 Kavalieros, J. A1 Avci, U. YR 2021 SN 2156-017X K1 Couplings K1 Nonvolatile memory K1 Ferroelectric films K1 Circuit simulation K1 Capacitors K1 Random access memory K1 Voltage SP 33.2.1 OP 33.2.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720510 DO https://doi.org/10.1109/IEDM19574.2021.9720510 SF ELIB - SuUB Bremen
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