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1 Ergebnisse
1
Scaling of double-gated WS2 FETs to sub-5nm physical gate l..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Smets, Quentin
;
Schram, Tom
;
Verreck, Devin
... - p. 34.2.1-34.2.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720517
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Scaling of double-gated WS2 FETs to sub-5nm physical gate length fabricated in a 300mm FAB</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720517&Exemplar=1&LAN=DE A1 Smets, Quentin A1 Schram, Tom A1 Verreck, Devin A1 Cott, Daire A1 Groven, Benjamin A1 Ahmed, Zubair A1 Kaczer, Ben A1 Mitard, Jerome A1 Wu, Xiangyu A1 Kundu, Souvik A1 Mertens, Hans A1 Radisic, Dunja A1 Thiam, Arame A1 Li, Waikin A1 Dupuy, Emmanuel A1 Tao, Zheng A1 Vandersmissen, Kevin A1 Maurice, Thibaut A1 Lin, Dennis A1 Morin, Pierre A1 Asselberghs, Inge A1 Radu, Iuliana YR 2021 SN 2156-017X K1 Performance evaluation K1 Semiconductor device modeling K1 Field effect transistors K1 Schottky barriers K1 Graphene K1 Switches K1 Logic gates SP 34.2.1 OP 34.2.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720517 DO https://doi.org/10.1109/IEDM19574.2021.9720517 SF ELIB - SuUB Bremen
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