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1 Ergebnisse
1
Dipole-First Gate Stack as a Scalable and Thermal Budget Fl..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Arimura, H.
;
Ragnarsson, L.-A.
;
Oniki, Y.
... - p. 13.5.1-13.5.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720527
RT T1
2021 IEEE International Electron Devices Meeting (IEDM)
: T1
Dipole-First Gate Stack as a Scalable and Thermal Budget Flexible Multi-Vt Solution for Nanosheet/CFET Devices
UL https://suche.suub.uni-bremen.de/peid=ieee-9720527&Exemplar=1&LAN=DE A1 Arimura, H. A1 Ragnarsson, L.-A. A1 Oniki, Y. A1 Franco, J. A1 Vandooren, A. A1 Brus, S. A1 Leonhardt, A. A1 Sippola, P. A1 Ivanova, T. A1 Verni, G. Alessio A1 Chang, R.-J. A1 Xie, Q. A1 Givens, M. A1 Mitard, J. A1 Biesemans, S. A1 Litta, E. Dentoni A1 Horiguchi, N. YR 2021 SN 2156-017X K1 Degradation K1 Silicon compounds K1 Technological innovation K1 Three-dimensional displays K1 Scalability K1 MOS capacitors K1 Logic gates SP 13.5.1 OP 13.5.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720527 DO https://doi.org/10.1109/IEDM19574.2021.9720527 SF ELIB - SuUB Bremen
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