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18nm FDSOI Technology Platform embedding PCM & Innovative C..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),

Min, Doohong ; Park, Jinha ; Weber, Olivier... - p. 13.1.1-13.1.4 , 2021

Link: https://doi.org/10.1109/IEDM19574.2021.9720542

RT 
T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>18nm FDSOI Technology Platform embedding PCM & Innovative Continuous-Active Construct Enhancing Performance for Leading-Edge MCU Applications</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9720542&Exemplar=1&LAN=DE
				
A1 Min, Doohong
A1 Park, Jinha
A1 Weber, Olivier
A1 Wacquant, Francois
A1 Villaret, Alexandre
A1 Vandenbossche, Eric
A1 Arnaud, Franck
A1 Bernard, Emilie
A1 Elghouli, Salim
A1 Boccaccio, Christian
A1 Favennec, Laurent
A1 Gonella, Roberto
A1 Galvier, Jean
A1 Yun, Jiyoung
A1 Park, Jinwoo
A1 Lee, Minuk
A1 Yoon, Pyeongjun
A1 Lee, Ilmin
A1 Seo, Heaseok
A1 Choi, Hoonsung
A1 Oh, Changbong
A1 Kang, Jinseok
A1 Park, Sewan
A1 Lee, Hyunjong
A1 Choi, Youngju
A1 Kim, Inwhan
A1 Jo, Joohyun
A1 Park, Yoonsoo
A1 Park, Jinchan
A1 Lee, Youngja
A1 Jung, Jinhyeok
A1 Lee, Juwon
A1 Jang, Hana
A1 Kang, Jihun
A1 Kwon, Jisoo
A1 Kim, Joochan
A1 Maeda, Shigenobu
A1 Hong, Youngki
YR 2021
SN 2156-017X
K1 Performance evaluation
K1 Industries
K1 Phased arrays
K1 Phase change materials
K1 Nonvolatile memory
K1 Random access memory
K1 Silicon-on-insulator
SP 13.1.1
OP 13.1.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720542
DO https://doi.org/10.1109/IEDM19574.2021.9720542
SF ELIB - SuUB Bremen

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