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1 Ergebnisse
1
Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Sung, Minchul
;
Rho, Kwangmyoung
;
Kim, Jayong
... - p. 33.3.1-33.3.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720545
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Low Voltage and High Speed 1Xnm 1T1C FE-RAM with Ultra-Thin 5nm HZO</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720545&Exemplar=1&LAN=DE A1 Sung, Minchul A1 Rho, Kwangmyoung A1 Kim, Jayong A1 Cheon, Junho A1 Choi, Kiyoung A1 Kim, Dohee A1 Em, Hoseok A1 Park, Gyeongcheol A1 Woo, Jungwook A1 Lee, Yeongyu A1 Ko, Jaehyeon A1 Kim, Moonhoi A1 Lee, Gwangyeob A1 Ryu, Seung Wook A1 Sheen, Dong Sun A1 Joo, Yangsung A1 Kim, Seiyon A1 Cho, Chang Hyun A1 Na, Myung-Hee A1 Kim, Jinkook YR 2021 SN 2156-017X K1 Electrodes K1 Low voltage K1 Capacitors K1 Random access memory K1 Switches K1 Time measurement K1 Manufacturing SP 33.3.1 OP 33.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720545 DO https://doi.org/10.1109/IEDM19574.2021.9720545 SF ELIB - SuUB Bremen
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