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Vertical-Transport Nanosheet Technology for CMOS Scaling be..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),

Jagannathan, H. ; Anderson, B. ; Sohn, C-W.... - p. 26.1.1-26.1.4 , 2021

Link: https://doi.org/10.1109/IEDM19574.2021.9720561

RT 
T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Vertical-Transport Nanosheet Technology for CMOS Scaling beyond Lateral-Transport Devices</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9720561&Exemplar=1&LAN=DE
				
A1 Jagannathan, H.
A1 Anderson, B.
A1 Sohn, C-W.
A1 Tsutsui, G.
A1 Strane, J.
A1 Xie, R.
A1 Fan, S.
A1 Kim, K-I.
A1 Song, S.
A1 Sieg, S.
A1 Seshadri, I.
A1 Mochizuki, S.
A1 Wang, J.
A1 Rahman, A.
A1 Cheon, K-Y.
A1 Hwang, I.
A1 Demarest, J.
A1 Do, J.
A1 Fullam, J.
A1 Jo, G.
A1 Hong, B.
A1 Jung, Y.
A1 Kim, M.
A1 Kim, S.
A1 Lallement, R.
A1 Levin, T.
A1 Li, J.
A1 Miller, E.
A1 Montanini, P.
A1 Pujari, R.
A1 Osborn, C.
A1 Sankarapandian, M.
A1 Son, G-H.
A1 Waskiewicz, C.
A1 Wu, H.
A1 Yim, J.
A1 Young, A.
A1 Zhang, C.
A1 Varghese, A.
A1 Robison, R.
A1 Burns, S.
A1 Zhao, K.
A1 Yamashita, T.
A1 Dechene, D.
A1 Guo, D.
A1 Divakaruni, R.
A1 Wu, T.
A1 Seo, K-I.
A1 Bu, H.
YR 2021
SN 2156-017X
K1 Performance evaluation
K1 Field effect transistors
K1 Logic gates
K1 Capacitance
K1 CMOS technology
K1 Nanoscale devices
K1 Hardware
K1 Vertical Transport Nanosheet FET
K1 VTFET
K1 Nanosheet
K1 FinFET
K1 Scaling
K1 Zero Diffusion Break
K1 ZDB
SP 26.1.1
OP 26.1.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720561
DO https://doi.org/10.1109/IEDM19574.2021.9720561
SF ELIB - SuUB Bremen

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