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1 Ergebnisse
1
Atomic-scale characterization of defects generation during ..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Zheng, Yunzhe
;
Zheng, Yonghui
;
Gao, Zhaomeng
... - p. 33.5.1-33.5.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720565
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Atomic-scale characterization of defects generation during fatigue in ferroelectric Hf0.5Zr0.5O2 films: vacancy generation and lattice dislocation</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720565&Exemplar=1&LAN=DE A1 Zheng, Yunzhe A1 Zheng, Yonghui A1 Gao, Zhaomeng A1 Yuan, Jun-Hui A1 Cheng, Yan A1 Zhong, Qilan A1 Xin, Tianjiao A1 Wang, Yiwei A1 Liu, Cheng A1 Huang, Yaru A1 Huang, Rong A1 Miao, Xiangshui A1 Xue, Kan-Hao A1 Lyu, Hangbing YR 2021 SN 2156-017X K1 Grain size K1 Transmission electron microscopy K1 Films K1 Microscopy K1 Ferroelectric materials K1 Lattices K1 Fatigue SP 33.5.1 OP 33.5.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720565 DO https://doi.org/10.1109/IEDM19574.2021.9720565 SF ELIB - SuUB Bremen
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