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Modelling of vertical and ferroelectric junctionless techno..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),

Maneux, C. ; Mukherjee, C. ; Deng, M.... - p. 15.6.1-15.6.4 , 2021

Link: https://doi.org/10.1109/IEDM19574.2021.9720572

RT 
T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>Modelling of vertical and ferroelectric junctionless technology for efficient 3D neural network compute cube dedicated to embedded artificial intelligence</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-9720572&Exemplar=1&LAN=DE
				
A1 Maneux, C.
A1 Mukherjee, C.
A1 Deng, M.
A1 Dubourg, M.
A1 Reveil, L.
A1 Bordea, G.
A1 Lecestre, A.
A1 Larrieu, G.
A1 Trommer, J.
A1 Breyer, E.T.
A1 Slesazeck, S.
A1 Mikolajick, T.
A1 Baumgartner, O.
A1 Karner, M.
A1 Pirker, D.
A1 Stanojevic, Z.
A1 Atienza, David
A1 Levisse, A.
A1 Ansaloni, G.
A1 Poittevin, A.
A1 Bosio, A.
A1 Deleruyelle, D.
A1 Marchand, C.
A1 O'Connor, I.
YR 2021
SN 2156-017X
K1 Solid modeling
K1 Three-dimensional displays
K1 Computational modeling
K1 Systems architecture
K1 Computer architecture
K1 Artificial neural networks
K1 Transistors
SP 15.6.1
OP 15.6.4
LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720572
DO https://doi.org/10.1109/IEDM19574.2021.9720572
SF ELIB - SuUB Bremen

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