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1 Ergebnisse
1
First Theoretical Modeling of the Bandgap-Engineered Oxynit..:
, In:
2021 IEEE International Electron Devices Meeting (IEDM)
,
Chen, Wei-Chen
;
Lue, Hang-Ting
;
Fan, Sheng-Ting
... - p. 8.3.1-8.3.4 , 2021
Link:
https://doi.org/10.1109/IEDM19574.2021.9720585
RT T1 <cTitle>2021 IEEE International Electron Devices Meeting (IEDM)</cTitle>: T1 <Title>First Theoretical Modeling of the Bandgap-Engineered Oxynitride Tunneling Dielectric for 3D Flash Memory Devices Starting from the Ab Initio Calculation of the Band Diagram to Understand the Programming, Erasing and Reliability</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-9720585&Exemplar=1&LAN=DE A1 Chen, Wei-Chen A1 Lue, Hang-Ting A1 Fan, Sheng-Ting A1 Hsu, Tzu-Hsuan A1 Jhang, Pei-Ci A1 Vej-Hansen, Ulrik G. A1 Khomyakov, Petr A. A1 Lin, Keng-Hua A1 Wang, Keh-Chung A1 Lu, Chih-Yuan YR 2021 SN 2156-017X K1 Solid modeling K1 Three-dimensional displays K1 Photonic band gap K1 Tunneling K1 Programming K1 Reliability theory K1 Silicon SP 8.3.1 OP 8.3.4 LK http://dx.doi.org/https://doi.org/10.1109/IEDM19574.2021.9720585 DO https://doi.org/10.1109/IEDM19574.2021.9720585 SF ELIB - SuUB Bremen
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